PART |
Description |
Maker |
HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES HSMS-2802 · Low reverse leakage Schottky diode HSMS-2803 · Low reverse leakage Schottky diode HSMS-2804 · Low reverse leakage Schottky diode HSMS-2805 · Low reverse leakage Schottky diode HSMS-2808 · Low reverse leakage Schottky diode HSMS-280B · Low reverse leakage Schottky diode HSMS-280C · Low reverse leakage Schottky diode HSMS-280E · Low reverse leakage Schottky diode HSMS-280F · Low reverse leakage Schottky diode HSMS-280K · Low reverse leakage Schottky diode HSMS-280L · Low reverse leakage Schottky diode HSMS-280M · Low reverse leakage Schottky diode HSMS-280N · Low reverse leakage Schottky diode HSMS-280R · Low reverse leakage Schottky diode
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http:// Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
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U10FWJ2C48M 10FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK (LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION)
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TOSHIBA[Toshiba Semiconductor]
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BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管(低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装) RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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PMEG1020EA |
Ultra low VFMEGA Schottky barrier diode Ultra low VF MEGA Schottky barrier
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PHILIPS[Philips Semiconductors]
|
KDR368E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
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Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR393S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
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Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
PMEG4010ER10 PMEG4010ER |
1 A low V_F MEGA Schottky barrier rectifier 1 A, 40 V, SILICON, SIGNAL DIODE 1 A low VF MEGA Schottky barrier rectifier
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NXP Semiconductors N.V.
|
6A8-G 6A05-G 6A10-G 6A1-G 6A2-G 6A4-G 6A6-G |
General Purpose Rectif
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Comchip Technology Co., Ltd. COMCHIP[Comchip Technology]
|
SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
PMEG3010BEV PMEG3010BEA PMEG4010BEV PMEG4010BEA PM |
1 A very low Vf MEGA Schottky barrier rectifier in ultra small SOT666 and in very small SOD323 (SC-76) package 1 A very low VF MEGA Schottky barrier rectifier 1安很低正向压降MEGA肖特基势垒整流器
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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KDR411S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
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Korea Electronics (KEC) KEC(Korea Electronics)
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MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
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